| abstract |
This invention is directed to an exposure chamber configured to contain a passivating gas having a selected hydrogen concentration, wherein the exposure chamber is further configured to contain at least one NLO crystal that is exposed to the passivating gas in the chamber. A passivating gas source, the passivating gas source configured to supply the passivating gas to the interior of the exposure chamber, and the substrate configured to hold the NLO crystal in the chamber, the substrate having a temperature of the NLO crystal; Further configured to maintain at or near the selected temperature, wherein the selected temperature is below the melting temperature of the NLO crystal. |