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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04
filingDate 2013-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102053388-B1
titleOfInvention Light emitting device
abstract Embodiments relate to a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and an illumination system. The light emitting device according to the embodiment may include a first conductivity type semiconductor layer 112; An active layer 114 including a quantum well and a quantum wall 114b on the first conductivity type semiconductor layer 112; An undoped last barrier layer 127 on the active layer 114; An Al x In y Ga (1-xy) N-based layer (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) 128 on the undoped last barrier layer 127; And a second conductivity type semiconductor layer 116 on the Al x In y Ga (1-xy) N-based layer 128, wherein the undoped last barrier layer 127 is one of the quantum wells 114w. A first In p1 Ga 1 - p1 N layer (where 0 &lt; p1 &lt; 1) 127a on the last quantum well (114wl) closest to the second conductive semiconductor layer 116; An Al q Ga 1 - q N layer (where 0 <q <1) 127b on the first In p1 Ga 1 - p1 N layer 127a; And a second In p2 Ga 1 - p2 N layer (where 0 <p2 <1) 127c on the Al q Ga 1 - q N layer.
priorityDate 2013-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.