http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102051902-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1204 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02562 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate | 2017-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102051902-B1 |
| titleOfInvention | Fabrication of transition metal telluride thin film using microwave heating |
| abstract | The present invention comprises the steps of (a) coating a precursor solution containing a transition metal precursor, tellurium (Te) precursor and an ionic liquid on a conductive substrate to prepare a conductive substrate coated with a precursor solution; And (b) irradiating microwaves to the conductive substrate coated with the precursor solution to prepare a transition metal telluride thin film on the conductive substrate. Method for producing a transition metal telluride thin film comprising a. The method for producing a transition metal telluride thin film of the present invention can form a thin film quickly and inexpensively by a solution process using microwaves. In the method for manufacturing a transition metal telluride thin film of the present invention, the thickness of the thin film can be controlled, and a uniform and crystallized thin film can be prepared on a substrate. |
| priorityDate | 2017-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 87.