http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102048533-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-13 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-86 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-86 |
| filingDate | 2018-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102048533-B1 |
| titleOfInvention | PREPARATION METHOD OF TWO-DIMENSIONAL In2O3 NANODISCS |
| abstract | The present invention relates to a method for synthesizing a novel material having a high conductivity and a large surface area required for an electrode of a supercapacitor. The present invention relates to an indium oxide (In 2 O) through a thermal thermal method in which process conditions such as surfactants are optimized. 3 ) by adjusting the nanodisk shape of the two-dimensional structure with a large surface area and a thin thickness, the material properties are greatly increased, and when applied to the electrode material of the supercapacitor (especially SSC), the specific capacitance, power density, The present invention relates to a method for manufacturing a two-dimensional indium oxide nanodisc, which can greatly improve the device performance such as energy density, rate characteristics, and cycle stability. |
| priorityDate | 2018-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.