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filingDate 2010-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102042281-B1
titleOfInvention Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
abstract Particularly described are systems and methods for depositing films on substrates in a reaction chamber. In an exemplary method, the method includes applying an atomic layer deposition cycle to the substrate, the cycle exposing the substrate to the precursor gas during the precursor pulse interval and then removing the precursor gas, and during the oxidizing pulse interval. Exposing the substrate to an oxidant comprising an oxidant gas and a nitrogen-containing species gas and then removing the oxidant. Aspects of the present invention utilize molecules and excited nitrogen-oxygen radicals / ion species that are more likely to be combined with oxidants such as ozone. Embodiments of the present invention also include electronic components and systems including devices manufactured through the method according to the present invention.
priorityDate 2009-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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