http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102031817-B1

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filingDate 2012-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102031817-B1
titleOfInvention Machine suitable for plating a cavity of a semi-conductive or conductive substrate such as a through via structure
abstract The present invention relates to a cavity of a semi-conductive or conductive substrate, such as a through silicon via type structure, a) attaching an insulating dielectric layer in the cavity, b) attaching a barrier layer to diffusion of the fill metal, c) electrodepositing a metal, preferably copper, to fill the cavity, and d) in accordance with a metallization process comprising the step of annealing the substrate, which relates to a metallization machine (1), wherein the wet-treatment of steps a), b) and c) in a chemical bath (B) A series of wet-treatment modules 10-60 configured to perform the treatment and at least one configured to perform annealing step d) of the substrate S such that the machine 1 can complete the entire metallization process of the cavity. It characterized in that it comprises an additional module 70 of.
priorityDate 2011-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.