http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102027360-B1
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
filingDate | 2012-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2019-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2019-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-102027360-B1 |
titleOfInvention | Nanolayer deposition process for composite films |
abstract | NanoLayer Deposition (NLD) processes are provided for depositing composite films of three-, four-, five-, and six-membered stoichiometric films. The deposition process of the present invention is a periodic process consisting of a series of thin film deposition and processing steps to obtain the desired stoichiometric film. The deposition steps are not self-limiting as in atomic layer deposition. In one embodiment for depositing a compound oxide film, the deposition process comprises a first deposition followed by a hydrogen-containing plasma treatment, a second deposition followed by a hydrogen-containing plasma treatment, and then a second deposition to produce a stoichiometric quaternary membrane. 3 deposition followed by hydrogen-containing plasma treatment, and then oxygen-containing plasma treatment. The periodic process is repeated until a film of the desired total thickness is obtained. The process of the present invention is used to produce high k dielectric films, ferroelectric films, piezoelectric films, and other composite oxides. |
priorityDate | 2011-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.