| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2017-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2019-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102026540-B1 |
| titleOfInvention |
Self-aligned structure for semiconductor devices |
| abstract |
FIELD The present disclosure relates to semiconductor devices and manufacturing methods, and more particularly, to semiconductor devices having self-aligned isolation structures. The present disclosure provides self aligned spacer fins that can be formed by depositing a dielectric material in an opening formed in the spacer layer or by replacing a portion of the fin with a dielectric material. Self-aligned isolation pins may be separated from each other by the critical dimension of the photolithography process used. The separation between self-aligned isolation pins or between self-aligned isolation pins and active pins may be approximately equal to or greater than the separation between active pins. |
| priorityDate |
2017-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |