http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102019849-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0008 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
| filingDate | 2013-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102019849-B1 |
| titleOfInvention | Light emitting device |
| abstract | The light emitting device according to the embodiment includes a light emitting structure including a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, and an active layer between the first semiconductor layer and the second semiconductor layer. An electron blocking layer between the active layer and the second semiconductor layer, wherein the electron blocking layer has a greater bandgap energy than the active layer, and is disposed above and below the undoped at least one intermediate layer and the intermediate layer At least two cover layers, wherein the cover layers are doped with a p-type dopant. |
| priorityDate | 2013-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.