| abstract |
The present invention is a silicon carbide sintered body in which a plurality of crystal grains of silicon carbide are formed adjacent to each other in close proximity to each other. In the triple point at which the grain boundary and the grain boundary forming the sintered body meet each other, Sc and Y elements are not dissolved into the grain By being present in a rich phase, it is possible to sinter at a temperature of 1950 ° C. or lower, and at the same time, an EB layer composed of rare earth-Si oxides containing Sc and Y elements is formed on the surface without an EB coating process. By forming the EB layer up to a solid three-dimensional bond, the possibility of occurrence of peeling phenomenon of the EB layer is reduced, and even when peeled off, a new EB layer is formed, which greatly increases the corrosion resistance of the silicon carbide material due to oxidation. It is possible to increase the operating temperature of the silicon carbide material by preventing oxidation of the silicon carbide material. And to provide a silicon carbide sintered body. |