http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102009869-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0758 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0388 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F30-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate | 2012-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102009869-B1 |
| titleOfInvention | Lithographic patterning process and resists to use therein |
| abstract | The lithography process involves the use of a silicon-containing polymer or a compound comprising at least one element selected from the group consisting of Ta, W, Re, Os, Ir, Ni, Cu, or Zn in the resist material for an EUV lithography process. . The wavelength of EUV light used in the process is less than 11 nm, for example 6.5 to 6.9 nm. The present invention also relates to novel silicone-containing polymers. |
| priorityDate | 2011-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.