| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5607 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5678
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5685 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 |
| filingDate |
2012-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2019-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102005226-B1 |
| titleOfInvention |
Nonvolatile memory device using variable resistive element and driving method thereof |
| abstract |
A nonvolatile memory device using a resistor and a driving method thereof are provided. The non-volatile memory device comprising: a resistive memory cell storing a multi-bit; Sensing node; A clamping unit coupled between the resistive memory cell and the sensing node and providing a clamping bias to the resistive memory cell, the clamping bias being changed over time; Providing a compensation current to the sensing node, wherein the compensation current is a constant compensator during a read interval; A sense amplifier connected to the sensing node and sensing a level change of the sensing node; And an encoder for encoding the output value of the sense amplifier in response to the first clock signal. |
| priorityDate |
2012-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |