http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102004587-B1

Outgoing Links

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filingDate 2014-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102004587-B1
titleOfInvention Substrate etching apparatus and substrate analysis method
abstract The present invention provides an etching apparatus suitable for etching polysilicon on a substrate or bulk silicon constituting a substrate. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching apparatus having a gas flow adjusting means for flowing an etching gas from a peripheral edge of a substrate to a substantially center thereof and relates to a technique for enabling polysilicon or bulk silicon to be etched to a uniform thickness over the entire substrate will be. Further, the gas flow adjusting means is provided so as to be movable up and down, and the etching speed can be controlled by adjusting the gas flow adjusting means.
priorityDate 2013-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Incoming Links

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Total number of triples: 27.