http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102004148-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 |
| filingDate | 2012-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102004148-B1 |
| titleOfInvention | Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm |
| abstract | For the production of an integrated circuit comprising a pattern having a line spacing dimension less than 50 nm and an aspect ratio > 3, wherein the 1 wt% aqueous solution of surfactant A exhibits a static surface tension < 25 mN / m , The surfactant A is at least three selected from the group consisting of trifluoromethyl, pentafluoroethyl, 1-heptafluoropropyl, 2-heptafluoropropyl, heptafluoroisopropyl and pentafluorosulfanyl Uses containing a short chain perfluorinated group Rf; And a pattern developed photoresist layer exposed to actinic radiation, a developer for said exposed photoresist layer and / or a pattern having a line spacing dimension of less than 50 nm and an aspect ratio > 3. Wherein said surfactant A is used in a chemical cleaning solution for a resist. With the surfactant A, pattern collapse is prevented, line edge roughness is reduced, watermark defects are prevented and eliminated, and defects are reduced by removal of the particles. |
| priorityDate | 2011-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 116.