http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102001057-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-428 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2012-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102001057-B1 |
| titleOfInvention | Method of fabricating array substrate |
| abstract | The present invention provides a method of manufacturing a semiconductor device, comprising: forming an oxide semiconductor layer on a substrate; Forming a gate insulating film and a gate electrode sequentially stacked in correspondence with a central portion of the oxide semiconductor layer; Forming a source / drain region having improved conductivity by performing a hydrogen plasma process on the oxide semiconductor layer exposed outside the gate electrode; Forming a barrier layer having a first thickness selectively in the source drain region; Forming an interlayer insulating film having a first contact hole exposing the barrier layer over the gate electrode; And forming a source electrode and a drain electrode which are in contact with the barrier layer through the first contact hole on the interlayer insulating film, respectively. |
| priorityDate | 2012-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.