| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0198
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-05 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-388
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00388
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00396
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-265 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate |
2012-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2019-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101993006-B1 |
| titleOfInvention |
Pattern forming method and polysiloxane composition |
| abstract |
An object of the present invention is to provide a pattern forming method capable of forming a fine pattern by increasing the workability of the fluorine-based gas etching of the silicon-containing film and the resistance to the oxygen-based gas etching in the multilayer resist process. (2) a step of forming a resist pattern on the silicon-containing film; (3) a step of forming a silicon-containing film on the upper surface side of the substrate to be processed by using the polysiloxane composition; Forming a silicon-containing pattern by dry-etching the silicon-containing film using the resist pattern as a mask; and (4) dry-etching the substrate to form a pattern on the substrate using the silicon-containing pattern as a mask Wherein the polysiloxane composition comprises a polysiloxane [A] containing a fluorine atom and a [B] crosslinking promoter. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160135216-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102388290-B1 |
| priorityDate |
2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |