| abstract |
Thereby improving the characteristics of the film formed on the substrate. Forming a first film containing silicon, oxygen, carbon, and nitrogen on the substrate and having a nitrogen concentration lower than the carbon concentration, the silicon concentration, and the oxygen concentration; And a second film including at least silicon and nitrogen and having an oxygen concentration lower than that of the first film, a nitrogen concentration and a carbon concentration higher than those of the first film, an oxygen concentration and a carbon concentration lower than that of the first film, And forming on the outermost surface of the first film thinner than the first film. |