http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101989392-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-4063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-4094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-4076 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-404 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-4063 |
| filingDate | 2011-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101989392-B1 |
| titleOfInvention | Method for driving semiconductor deivce |
| abstract | It is an object of the present invention to obtain a memory element (DRAM) that easily retains multivalued information. By varying the potential of the wiring (bit line) for inputting information to the memory element (DRAM) in the period in which the transistor of the memory element (DRAM) is in the ON state, And controls the accumulated amount of charge. Accordingly, the information held in the memory element (DRAM) can be multivalued without complicating the structure of the semiconductor device having the memory element (DRAM). |
| priorityDate | 2010-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.