http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101981160-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C5-14 |
| filingDate | 2012-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101981160-B1 |
| titleOfInvention | Semiconductor device and driving method thereof |
| abstract | An object of the present invention is to provide a circuit which is suitable as a circuit (power supply control circuit) which functions as a switch capable of selecting supply and cutoff of a power supply voltage to a signal processing circuit. A transistor for controlling electrical connection between a first wiring for supplying a power source potential to the signal processing circuit and a second wiring for supplying a power source potential and a second wiring for supplying a power source potential to the signal processing circuit, And at least one of the two transistors has a channel formed in the oxide semiconductor layer. This makes it possible to reduce the power consumption due to at least one cutoff current of the two transistors. |
| priorityDate | 2011-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.