http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101980515-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2012-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101980515-B1 |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | An object of the present invention is to provide stable electrical characteristics to a semiconductor device using an oxide semiconductor and to achieve high reliability. In the manufacturing process of a transistor including an oxide semiconductor film, an amorphous oxide semiconductor film is formed, and oxygen is introduced into the amorphous oxide semiconductor film to form an amorphous oxide semiconductor film containing excess oxygen. After forming an aluminum oxide film on the amorphous oxide semiconductor film, heat treatment is performed to crystallize at least a portion of the amorphous oxide semiconductor film to form a crystalline oxide semiconductor film. |
| priorityDate | 2011-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 63.