http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101976856-B1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-18
filingDate 2013-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101976856-B1
titleOfInvention Manufacturing method of an array substrate for liquid crystal display
abstract The present invention relates to a method of manufacturing a semiconductor device, comprising: laminating a pure amorphous silicon (a-Si: H) thin film on a substrate and sequentially laminating an amorphous silicon (n + a-Si: H) Forming a mask pattern in which an etching region is opened on the amorphous silicon (n + a-Si: H) thin film containing the impurity; And A method for manufacturing an array substrate for a liquid crystal display device, comprising: a step of collectively etching a thin amorphous silicon (a-Si: H) thin film and an amorphous silicon (n + a-Si: H) In the method, The etching liquid composition, (A) and sulfate from 5.0 to 15% by weight relative to the total composition weight, (B) Fe 3 + compound 1.0 to 20.0% by weight, (C) also 0.01 to 10.0% by weight of a fluorine compound, (D) mineral acid (E) 0.01 to 10.0% by weight of an etching rate improver, and (F) a residual amount of water. The present invention also relates to a method for producing an array substrate for a liquid crystal display.
priorityDate 2013-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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