http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101972969-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-486 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
filingDate | 2012-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2019-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2019-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101972969-B1 |
titleOfInvention | Semiconductor device and method for fabricating the same |
abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly, to a technique capable of preventing copper ion migration when a penetrating electrode (TSV) is formed. A semiconductor device according to the present invention includes: a penetrating electrode that penetrates a semiconductor substrate; an oxide film that is positioned on a lower side wall of the penetrating electrode; and a first barrier film that covers the upper portion of the penetrating electrode, the upper sidewall of the penetrating electrode, . |
priorityDate | 2012-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.