http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101972969-B1

Outgoing Links

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
filingDate 2012-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101972969-B1
titleOfInvention Semiconductor device and method for fabricating the same
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly, to a technique capable of preventing copper ion migration when a penetrating electrode (TSV) is formed. A semiconductor device according to the present invention includes: a penetrating electrode that penetrates a semiconductor substrate; an oxide film that is positioned on a lower side wall of the penetrating electrode; and a first barrier film that covers the upper portion of the penetrating electrode, the upper sidewall of the penetrating electrode, .
priorityDate 2012-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 32.