| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1436
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1454
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate |
2013-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2019-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101970858-B1 |
| titleOfInvention |
Abrasive composition and method for producing semiconductor substrate |
| abstract |
The polishing composition has a pH of 7 or more and is used for polishing a silicon substrate. The abrasive composition contains abrasive grains and a water-soluble polymer. The water-soluble polymer is a copolymer composed of a first monomer unit having a characteristic value P of not less than 50 and not more than 100 and a second monomer unit having a characteristic value P of not less than 100 and not more than 50, wherein the characteristic value P is Min < / RTI > for the abrasive grain determined by the standard test B from the wettability coefficient S1 for the silicon substrate, |
| priorityDate |
2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |