http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101970548-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2011-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101970548-B1 |
| titleOfInvention | oxide including film, and oxide semiconductor thin film transistor, and fabrication method of oxide semiconductor thin film transistor using the same |
| abstract | The present invention can provide an oxide insulating film having an intrinsic resistance value higher than that of the oxide semiconductor film by two or more digits by adding an additional carbon atom to the oxygen atom and can form an oxide semiconductor material containing an appropriate amount of oxygen atoms, , An oxide semiconductor thin film transistor device using an oxide insulating layer material containing an appropriate amount of carbon atoms added to an oxygen atom as a gate insulating layer, a channel protecting layer, and a passivation layer, and a method of manufacturing the oxide semiconductor thin film transistor element. The insulating film is formed by adding an additional carbon atom to the oxygen atom in the oxide semiconductor layer. |
| priorityDate | 2010-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.