http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101959183-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2011-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101959183-B1 |
| titleOfInvention | Method of depositing dielectric films using microwave plasma |
| abstract | An embodiment of the present invention describes a method of forming a dielectric film for a semiconductor device. The method includes providing a substrate in a processing chamber including a microwave plasma source, introducing a processing gas containing a non-metal containing a deposition gas having carbon-nitrogen intermolecular bonds into the processing chamber, And exposing the substrate to the plasma to deposit a carbon-nitrogen containing film on the substrate. In some embodiments, the carbon-nitrogen containing film may comprise a CN film, a CNO film, a Si-doped CN film, or a Si-doped CNO film. |
| priorityDate | 2010-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.