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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14
filingDate 2012-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101956048-B1
titleOfInvention Light emitting device
abstract A light emitting device according to an embodiment includes a first conductive semiconductor layer; An active layer on the first conductive semiconductor layer; In x Al y Ga (1-xy) N GHTL (Graded Hole Transfer Layer) on the active layer; An electron blocking layer on the In x Al y Ga (1-xy) N GHTL; And a second conductive semiconductor layer on the electron blocking layer.
priorityDate 2012-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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