| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-04 |
| filingDate |
2015-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2019-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101953782-B1 |
| titleOfInvention |
Single crystal manufacturing method and silicon wafer manufacturing method |
| abstract |
A direct part forming step of forming a direct part of a single crystal by bringing a seed crystal into contact with a dopant-added melt added with a silicon melt so that the resistivity of the single crystal becomes 0.9 m? ยท Cm or less, A separation step of separating the single crystal from the dopant-added melt is performed in a state where the temperature at the top of the direct part is 590 DEG C or higher. |
| priorityDate |
2014-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |