http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101941766-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01022 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67196 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45555 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67393 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2017-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101941766-B1 |
| titleOfInvention | Substrate processing method and recording medium |
| abstract | The present invention provides a technique for suppressing the incorporation of N atoms into a film in forming a Ti film on a wafer by plasma CVD. A plasma of H 2 gas is used to remove components including TiCl x and Cl x in the processing vessel 20 after the Ti film 103 is formed on the surface of the Si film 101 of the wafer W. [ Therefore, the incorporation of N in the Ti film 103 can be suppressed. Therefore, the reaction of the silicidation of Ti at the interface between the Ti film 103 and the Si film 101 is not inhibited. Further, N in the processing container 20 can be further suppressed by using a plasma of H 2 gas to remove components including TiCl x and Cl x after the wafer W is taken out. Also in the precoat carried out on the inner surface of the processing vessel 20, a Ti film is formed so as to cover the surface of the TiN film, whereby the N film in the Ti film 103 when the Ti film 103 is formed on the W surface of the wafer Can be suppressed. |
| priorityDate | 2016-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.