http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101933777-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01J2001-4466 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01J1-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-107 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J1-44 |
| filingDate | 2017-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101933777-B1 |
| titleOfInvention | Photon detector with quantum well structure |
| abstract | The present invention relates to a photon detector employing a quantum well structure. The photon detector according to the present invention comprises a substrate including n + InP, a buffer layer formed on the substrate, an absorption layer formed on the buffer layer and containing InGaAs, a charge layer formed on the absorption layer and including n + InP, And a diffusion layer formed on the multiplication layer and including p + InP. The photon detector having such a configuration can absorb light even in the quantum well layer of the multiplication layer, thereby reducing the tunneling phenomenon by reducing the thickness of the conventional absorption layer, and achieving high photocurrent and low dark current. |
| priorityDate | 2017-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.