http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101933256-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate | 2013-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101933256-B1 |
| titleOfInvention | Method for producing an active zone for an optoelectronic semiconductor chip, and optoelectronic semiconductor chip |
| abstract | At least one embodiment a method for fabricating an active region for the optoelectronic semiconductor chip is configured on, includes the following steps: O ≤ x4 ≤ 0.40, and, on average, 0 <y4 ≤ 0.4 of Al x4 In y4 Ga 1- x 4 -y 4 N-based fourth barrier layer 24, wherein the In content increases along the growth direction z and grows the quantum well layer 20 on the fourth barrier layer 24 Wherein the quantum well layer 20 is based on In y Ga 1 -yN with 0.08 ≤ y ≤ 0.35 and 0 ≤ x1 ≤ 0.40 on the quantum well layer 20 and 0 <y1 ≤ 0.4 on average Growing the first barrier layer 21 based on Al x1 In y1Ga1 -x1-y1N, wherein the In content is decreased along the growth direction z and is grown on the first barrier layer 21 Growing a GaN-based second barrier layer 20 and growing a GaN-based third barrier layer 23 on the second barrier layer 22, Layer 23 is grown under the addition of H 2 gas. |
| priorityDate | 2012-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.