http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101931201-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2012-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101931201-B1 |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | Disclosure of the Invention The present invention aims to provide a semiconductor device which achieves miniaturization while suppressing defects. The channel forming region is extended in a direction perpendicular to the substrate by forming a convex portion or a trench (groove) in the insulating layer and forming a channel forming region of the semiconductor layer to contact the convex portion or the trench. This makes it possible to extend the effective channel length while achieving miniaturization of the transistor. Further, before the semiconductor layer is formed, the thin film semiconductor layer having excellent covering properties is formed by performing the R processing on the convex portion or the top edge portion of the trench where the semiconductor layer is in contact. |
| priorityDate | 2011-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.