http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101926694-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2012-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101926694-B1 |
| titleOfInvention | Silicon carbide epi wafer and method of fabricating the same |
| abstract | A method of manufacturing an epitaxial wafer according to an embodiment includes: preparing a wafer in a susceptor; Surface treating the wafer; And growing an epitaxial layer on the wafer. An epitaxial wafer according to an embodiment includes: a wafer; And an epitaxial layer formed on the wafer, wherein the surface defect of the wafer is 0.5 ea / cm < 2 >. |
| priorityDate | 2012-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.