| abstract |
The resist pattern forming method according to the present invention includes a resist layer forming step, a pattern exposure step, a flood exposure step, and a developing step. In the resist layer forming step, a resist layer containing a base resin, a sensitizer precursor, an acid generator, and a base generator is formed on the substrate. In the pattern exposure step, pattern exposure is performed on the resist layer to generate a sensitizer from the sensitizer precursor. In the flood exposure step, after the pattern exposure, the resist layer on which the sensitizer is formed is subjected to flood exposure to generate an acid from the acid generator, a base is generated from the base generator, and in the development step, The resist layer is developed. |