| abstract |
A method for filling a concave portion of an object to be processed is provided. In one method, a first thin film of semiconductor material is formed along a wall surface defining a recess. Subsequently, the first thin film is vapor-phase doped. Subsequently, the object to be processed is annealed in the container to form an epitaxial region according to the crystal of the semiconductor substrate from the semiconductor material of the first thin film without moving the vapor-phase-doped first thin film along the surface of the semiconductor substrate defining the recess do. Subsequently, a second thin film of semiconductor material is formed along the wall surface defining the concave portion. Subsequently, the object to be processed is annealed in the container, so that an epitaxial region is further formed from the semiconductor material of the second thin film moved toward the bottom of the recess. |