http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101922397-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-17772 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-1776 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0944 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-0175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-0944 |
| filingDate | 2012-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101922397-B1 |
| titleOfInvention | Semiconductor device |
| abstract | A semiconductor device having a new configuration is provided. The semiconductor device includes a first p-type transistor, a second n-type transistor, a third transistor, and a fourth transistor. One of a source and a drain of the third transistor is connected to a wiring for supplying a first potential and the other is connected to one of a source and a drain of the first transistor. One of the source and the drain of the second transistor is connected to the other of the source and the drain of the first transistor and the other is connected to one of a source and a drain of the fourth transistor. And the other of the source and the drain of the fourth transistor is connected to a wiring for supplying a second potential lower than the first potential. An oxide semiconductor material is used in the channel forming regions of the third and fourth transistors. |
| priorityDate | 2011-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 85.