http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101918565-B1

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filingDate 2012-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101918565-B1
titleOfInvention Deposition of metal films using alane-based precursors
abstract The present invention provides methods for depositing pure metal and aluminum alloy films. Specific methods include contacting the substrate surface with first and second precursors, wherein the first precursor is selected from the group consisting of dimethyl aluminum hydride, an amine coordinated with an amine, and a compound having a structure represented by formula (I) or (II) , And the second precursor comprises a metal halide: Wherein R is a C1-C6 alkyl group. Other methods include sequentially exposing the substrate to the first and second precursors, wherein the first precursor comprises an aluminum precursor as described above and the second precursor is Ti (NR ' 2 ) 4 or Ta (NR ' 2 ) 5 wherein R' is a C1-C4 alkyl, alkenyl, alkynyl, keto or aldehyde group.
priorityDate 2011-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 54.