http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101905394-B1

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filingDate 2011-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101905394-B1
titleOfInvention Semiconductor device
abstract In a semiconductor device having a photosensor, the noise of external light is reduced, and the noise caused by leakage due to the off current of the transistor is also reduced. And a plurality of photosensors arranged in a matrix. Each of the plurality of photosensors has a photoelectric conversion element and an amplification circuit. The backlight is turned on, light is irradiated on the object to be detected, and the photo sensor of the p-th row performs the reset operation and the accumulation operation. Then, the backlight is turned off and the reset operation is performed in the photo sensor of the (p + The accumulation operation is performed, and thereafter, the selection operation of the preceding photosensor is sequentially performed. The difference between the output signals obtained from the photosensors of the adjacent rows is acquired and the generation of the sensed image of the sensed object or the region in which the sensed object exists is detected using the difference. The amplifier circuit has a transistor for holding the accumulated charge, and the channel is formed in the oxide semiconductor layer.
priorityDate 2010-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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