http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101904324-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2011-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101904324-B1 |
| titleOfInvention | Light emitting device |
| abstract | The embodiment includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and includes GaN grown on the a- A light emitting structure; An interlayer disposed adjacent to the light emitting structure and formed of the first conductive semiconductor layer or the undoped semiconductor layer; And a plurality of protrusions disposed in the interlayer. |
| priorityDate | 2011-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.