http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101898468-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2016-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101898468-B1 |
| titleOfInvention | Contact hole formation methods |
| abstract | A contact hole forming method includes: (a) providing a substrate comprising a plurality of post patterns on a layer to be patterned; (b) forming a hard mask layer on the post patterns and the layer to be patterned; (c) coating the pattern processing composition on the hard mask layer, wherein the pattern processing composition comprises a polymer comprising a reactive surface adhering group and a solvent; And optionally baking the substrate, wherein the polymer is bonded to the hardmask layer to form a polymer layer over the hardmask layer; And (d) treating the substrate with a detergent comprising a solvent to remove residual unbound polymer, forming a first hole disposed between the plurality of surrounding post patterns . The method does not have the step of exposing the polymer to active radiation from the coating of the pattern-treating composition to the treatment of the substrate with the solvent. Pattern processing compositions and electronic devices formed by methods are also provided. The present invention finds particular applicability in the manufacture of semiconductor devices to provide high resolution contact hole patterns. |
| priorityDate | 2015-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 201.