Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7926 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448 |
filingDate |
2012-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2018-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-101895398-B1 |
titleOfInvention |
Method of forming an oxide layer and a method of fabricating a semiconductor device comprising the same |
abstract |
The present invention provides a method of forming a barrier layer, comprising: forming a layer of reaction inhibiting groups on a substrate surface; Forming a layer of a metal precursor or a semiconductor precursor on top of the layer of reaction inhibiting groups; And oxidizing the metal precursor or semiconductor precursor to obtain a layer of metal oxide or semiconductor oxide. By using the oxide layer forming method of the present invention, an oxide layer having excellent step coverage can be formed and a semiconductor device having excellent electrical characteristics can be manufactured. |
priorityDate |
2011-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |