http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101884472-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 |
| filingDate | 2012-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101884472-B1 |
| titleOfInvention | Method of forming resist pattern and negative tone-development resist composition |
| abstract | A resist composition containing a base component (A) whose solubility in an organic solvent is decreased by the action of an acid and a fluorine polymer compound (F) with an acid generator component (B) A method for forming a resist pattern, comprising the steps of: forming a resist film on a substrate; exposing the resist film; and patterning the resist film by negative development using an organic solvent-containing developer, (A1) having a structural unit (a1) containing an acid-decomposable group whose polarity is increased by the action of an acid, wherein the resin component (A1) and the fluorine-containing polymer compound (F) is 10 nm / s or more, and the dissolution rates of the resin component (A1) and the fluorocopolymer compound (F) A resist pattern forming method the absolute value is not more than 80 ㎚ / s of the difference between the dissolution rate in sangaek. |
| priorityDate | 2011-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 467.