http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101884020-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1454 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2011-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101884020-B1 |
| titleOfInvention | Polishing composition for polishing through-silicon via (tsv) wafer and use of the same |
| abstract | A polishing composition for polishing through silicon via vias (TSV) wafers and a method for polishing a TSV wafer using the same are provided. The polishing composition comprises an organic alkaline compound, an oxidizing agent, a chelating agent, silicon oxide abrasive particles and a solvent. Using the polishing composition, silicon and the conductive material can be simultaneously polished to significantly reduce the cost of the time required for polishing the TSV wafer. |
| priorityDate | 2011-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 82.