| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01044 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45561
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2016-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2018-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101882991-B1 |
| titleOfInvention |
Ruthenium film forming method, film forming apparatus, and semiconductor device manufacturing method |
| abstract |
A method for forming a thin and continuous ruthenium film by CVD is provided. The ruthenium film is formed by supplying a CO gas as a carrier gas from a CO gas container 43 containing a CO gas to a film forming material container 41 containing solid ruthenium carbonyl as a film forming raw material to form ruthenium carbonyl A step of introducing a gas as a mixed gas with a CO gas into the processing vessel 1 to decompose the ruthenium carbonyl on the wafer W to form a ruthenium film and a step of stopping the introduction of the mixed gas into the processing vessel 1 And introducing CO gas from the CO gas vessel 43 directly into the processing vessel 1 to bring the CO gas into contact with the surface of the wafer W. [ Preferably, the deposition process and the CO gas introduction process are repeated a plurality of times. |
| priorityDate |
2015-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |