Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
filingDate |
2012-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2018-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-101881184-B1 |
titleOfInvention |
Method of forming double pattern |
abstract |
(1b) a step of exposing the first resist film to light; and (1c) a step of exposing the exposed first resist film to a first resist film using a developer (2a) forming a second resist film on a space portion of the first resist pattern using a second photoresist composition, (2b) forming a second resist film on the space portion of the first resist pattern, (2c) a step of forming a second resist pattern including a step of developing the exposed second resist film by using a second developer containing an organic solvent, wherein the step Wherein the pattern is insoluble or insoluble in the second developer. |
priorityDate |
2011-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |