http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101877448-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-134372 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136236 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78633 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 2011-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101877448-B1 |
| titleOfInvention | Array substrate for fringe field switching mode liquid crystal display device and method of fabricating the same |
| abstract | The present invention provides a method of manufacturing a thin film transistor, comprising: forming a thin film transistor in each pixel region on a substrate on which a pixel region is defined; Forming a first passivation layer over the thin film transistor; Forming a common electrode over the first passivation layer; Forming a second protective layer over the common electrode; Forming an auxiliary insulating layer of a first thickness over the second passivation layer; Forming a first photoresist pattern having a second thickness over the auxiliary insulating layer and a second photoresist pattern having a third thickness thinner than the second thickness; Forming a drain contact hole exposing the drain electrode of the thin film transistor by successively etching the auxiliary insulating layer exposed to the outside of the first and second photoresist patterns and the second and first protective layers below the auxiliary insulating layer; ; Exposing the auxiliary insulating layer by performing ashing to remove the second photoresist pattern; Forming an insulating pattern having an undercut shape under the first photoresist by exposing the first passivation layer by removing the auxiliary insulating layer located outside the first photoresist by performing dry etching; Forming a transparent conductive material layer over the first photoresist pattern, the transparent conductive material layer having a fourth thickness that is thinner than the first thickness over the first photoresist pattern; Forming a pixel electrode on each of the pixel regions by opening a portion where the insulating pattern is formed by performing a lift-off process for simultaneously removing the first photoresist pattern and the transparent conductive material layer located on the first photoresist pattern, A method of manufacturing an array substrate for a field switching mode liquid crystal display and an array substrate for a fringe field switching mode liquid crystal display manufactured thereby. |
| priorityDate | 2011-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.