http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101866560-B1

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filingDate 2011-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101866560-B1
titleOfInvention Solid-state imaging device and imaging apparatus
abstract The solid-state image pickup device includes a photoelectric conversion layer and a MOS transistor circuit. The photoelectric conversion layer is formed on the semiconductor substrate. The MOS transistor circuit reads signals formed in the semiconductor substrate corresponding to the charges collected after being generated in the photoelectric conversion layer, and these charges have a predetermined polarity. The MOS transistor circuit includes a charge storage section, a reset transistor, and an output transistor. The charge storage portion is electrically connected to the photoelectric conversion layer. The reset transistor resets the potential of the charge storage portion to the reset potential. The output transistor outputs a signal corresponding to the potential of the charge storage portion. The reset transistor and the output transistor have carriers whose polarity is opposite to the predetermined polarity. In the MOS transistor circuit, the following equation (1) is satisfied: GND <Vs <GND + V2 + (Vdd / 5) ... (One).
priorityDate 2010-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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