| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10672
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01051 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02549
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 |
| filingDate |
2016-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2018-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101862072-B1 |
| titleOfInvention |
Manufacturing method of translucent thin film, manufacturing method of oxides semiconductor having absorptive characteristic of visible irradiation and oxides semiconductor therefrom |
| abstract |
The present invention provides a method of manufacturing a semiconductor device, comprising: S1: a step of forming a translucent film layer on a substrate using a non-vacuum electrodeposition; And a step S2 in which an active layer is formed on the semitransparent film layer in a non-vacuum state, wherein the preferred orientation in a specific direction is determined in the semitransparent film layer, and the active layer is grown in a specific direction determined in the semi-transparent film layer And a method of manufacturing an oxide semiconductor having an absorptive property in a visible light region. The high resistivity problem, which is a disadvantage of the p-type oxide semiconductor grown by the low temperature electrodeposition process, is solved by controlling the electrochemical growth behavior through the metal surface active agent. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11430955-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20230063155-A |
| priorityDate |
2016-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |