| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-976
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2013-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2018-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101850167-B1 |
| titleOfInvention |
FORMATION OF SiOCl-CONTAINING LAYER ON SPACER SIDEWALLS TO PREVENT CD LOSS DURING SPACER ETCH |
| abstract |
In accordance with the present invention, a method of performing a spacer etch process is described. The method includes the steps of conformally applying a spacer material over the gate structure on the substrate and a spacer etch process procedure to partially remove the spacer material from the gate structure and the substrate while maintaining the sidewall spacers located along the sidewalls of the gate structure . This spacer etch process procedure may include depositing a SiOCl-containing layer on the exposed surface of the spacer material to form a spacer protective layer. |
| priorityDate |
2012-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |