http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101847765-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_050fc7b82c5d17d9aeb63a7cdcc546b3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-26 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2017-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f0d670b265fc6e00f7e4d67ee564f64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63c485026b36bd7c707ebd5ff3d1ffb0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce2e350229364cbc22e43ae7c4066b7c |
| publicationDate | 2018-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101847765-B1 |
| titleOfInvention | Thin film device and driving method using the same |
| abstract | In the thin film device of the present invention, an insulator layer and an oxide semiconductor layer are alternately interposed between a first electrode and a second electrode, the first electrode and the second electrode are in contact with an insulator layer, When an electric field is formed between the electrodes, electrons injected from the first electrode or the second electrode move while passing through the insulator layer and the oxide semiconductor layer in the vertical direction to flow current, and the insulator layer and the oxide semiconductor layer are moved in the vertical direction The direction of movement of the current passing through the first electrode may be changed from the first electrode to the second electrode direction by the relative magnitude of the first voltage applied to the first electrode and the second voltage applied to the second electrode, And a third electrode is formed on the oxide semiconductor layer. As a predetermined voltage is applied, at least a part of the electrons, which have moved vertically between the first electrode and the second electrode, And is drawn out in the pole direction. |
| priorityDate | 2017-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 71.