http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101845470-B1

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filingDate 2016-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45e83753a561c2cc65deee6a54daa52f
publicationDate 2018-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101845470-B1
titleOfInvention Optoelectronic device and method for fabricating the same
abstract A photoelectric device including a lanthanum-based active layer and a manufacturing method thereof are disclosed. An optoelectronic device according to the present invention comprises an active layer of a multiple quantum well (MQW) structure comprising a well layer between well walls, said well wall comprising an alkali metal halide compound, an alkaline earth metal halide compound, An alkali metal chalcogen compound, and an alkaline earth metal chalcogen compound, wherein the well layer is a layer of a lanthanum metal halide compound, a lanthanum metal chalcogen compound, a transition metal (including a post transition metal) Wherein the layer is a layer containing a semiconductor selected from the group consisting of cobalt compounds and cobalt compounds. The photoelectric device having an active layer according to the present invention can be applied to an LED for illumination, a display, an optical sensor, and a solar cell. When the active layer according to the present invention is applied as a light conversion layer, display can be realized by up-converting or down-converting short wavelengths of UV, blue, and IR light sources to visible light wavelengths of red, green, and blue.
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